Title :
New multiwafer gas source MBE system for flexible and cost effective fabrication of GaInAsP/InP based opto-electronic devices
Author :
Lelarge, F. ; Gaborit, F. ; Gentner, J.L.
Author_Institution :
ALCATEL CIT, Marcoussis, France
Abstract :
Wavelength emission of GaxIn1-xAsyP1-y/InP multiple quantum wells (MQW´s) heterostructures -town in a multiwafer Gas Source Molecular Beam Epitaxy (GSMBE) is studied in details. Excellent photoluminescence wavelength uniformity is reported in 4×2-inch and 1×4-inch configurations, demonstrating the compatibility of GSMBE process with large scale 1.55 μm telecom laser production. A strong dependence of wavelength dispersion on group-V to group-III ratio is reported and analyzed qualitatively.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optoelectronic devices; photoluminescence; semiconductor growth; 1 in; 1.55 micron; 2 in; 4 in; GaxIn1-xAsyP1-y-InP; GaInAsP/InP based opto-electronic devices; cost effective fabrication; large scale 1.55 μm telecom laser production; multiple quantum wells; multiwafer gas source MBE system; photoluminescence wavelength uniformity; wavelength dispersion; wavelength emission; Costs; Fabrication; Gas lasers; Indium phosphide; Large-scale systems; Molecular beam epitaxial growth; Optoelectronic devices; Photoluminescence; Quantum well devices; Telecommunications;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205309
