Title :
An RF transceiver for WDCT in a 25 GHz Si bipolar technology
Author :
Li Puma, G. ; Geppert, W. ; Hadjizada, K. ; Van Waasen, S. ; Mevissen, W. ; Von Schwartzenberg, W. ; Heinen, S.
Author_Institution :
Design Centre, Infineon Technol., Dusseldorf, Germany
Abstract :
A RF Si bipolar transceiver IC for WDCT is presented. The complete transceiver operates from 3.1 V to 5.1 V and provides very high integration level. The receiver uses a single-conversion architecture with an image-reject frontend and needs no external trimming.
Keywords :
UHF integrated circuits; bipolar MMIC; cordless telephone systems; digital radio; elemental semiconductors; silicon; spread spectrum communication; time division multiple access; transceivers; 25 GHz; 3.1 to 5.1 V; RF transceiver; Si; WDCT; bipolar technology; image-reject frontend; integration level; single-conversion architecture; transceiver IC; worldwide digital cordless telecommunication standard; Costs; Demodulation; Frequency shift keying; Power amplifiers; Radio frequency; Regulators; Synthesizers; Time division multiple access; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860975
