230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions

Author

Djayaprawira, D.D. ; Tsunekawa, K. ; Nagai, M. ; Maehara, H. ; Yamagata, S. ; Watanabe, N. ; Yuasa, S. ; Ando, K.

Author_Institution

ANELVA Corp., Tokyo, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

467

Lastpage

468

Abstract

The magnetoresistance ratio of 230% at room temperature is reported. This was achieved in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates. The amorphous CoFeB electrodes are of great advantage to the polycrystalline FeCo electrodes in achieving a high homogeneity in small 100 nm-sized MTJs.

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnesium compounds; magnetic multilayers; magnetic thin films; oxidation; spin valves; tunnelling magnetoresistance; 100 nm; 293 to 298 K; CoFeB-MgO-CoFeB; CoFeB/MgO/CoFeB magnetic tunnel junctions; MgO barrier layer; SiO; amorphous CoFeB ferromagnetic electrodes; magnetoresistance ratio; polycrystalline FeCo electrodes; room temperature magnetoresistance; spin-valve type magnetic tunnel junctions; thermally oxidized Si substrates; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Electrodes; Magnetic films; Magnetic tunneling; Sputtering; Temperature; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463662

Filename

1463662