DocumentCode :
3530425
Title :
InP photonic crystal membrane structures
Author :
Hu, E.L. ; Xing, A. ; Davanco, M. ; Reese, C. ; Blumenthal, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
69
Lastpage :
73
Abstract :
Quasi-2-dimensional photonic band gap waveguides have been etched onto InGaAsP membranes. A variety of structures were formed, with differing lattice constants and fill factors. Transmission measurements through these structures allowed mapping out of the band gap and band edge of the photonic crystal structures. Comparisons between experimental measurements and theoretical simulations allowed us to determine the sensitivity of optical output to fabrication errors and variations.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; photonic band gap; photonic crystals; InGaAsP; InGaAsP membranes; InP; InP photonic crystal membrane structures; etching; fill factors; lattice constants; quasi-2-dimensional photonic band gap waveguides; Biomembranes; Etching; Indium phosphide; Lattices; Optical device fabrication; Optical sensors; Optical waveguides; Photonic band gap; Photonic crystals; Waveguide discontinuities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205314
Filename :
1205314
Link To Document :
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