Fabrication aspects of InP-CAIBE processing for photonic crystal devices

Author

Golka, S. ; Janiak, Klemens ; Hensel, H.J. ; Heidrich, H.

Author_Institution

Fraunhofer Inst. fur Nachrichtentechnik, Heinrich-Hertz-Inst., Berlin, Germany

fYear

2003

fDate

12-16 May 2003

Firstpage

74

Lastpage

77

Abstract

An improved Ar/Cl CAME process for the fabrication of InP-based Photonic Crystals (PhCs) is presented. Effects of temperature, ion beam, chlorine flow and other parameters are discussed. In particular feature size effects are investigated on a length scale of 200 to 400 nm required for the realization of infrared photonic band gaps. The potential of CAIBE for fabrication of deep and uniform hole patterns in InP is demonstrated. The good quality of the samples including multi quantum well InGaAsP/InP layers was demonstrated by performing transmission measurements by internal light source technique.

Keywords

III-V semiconductors; indium compounds; photonic band gap; photonic crystals; sputter etching; 200 to 400 nm; Ar-Cl; CAIBE processing; InGaAsP-InP; InP; fabrication; feature size effects; infrared photonic band gaps; multi quantum well InGaAsP/InP layers; photonic crystal devices; temperature effects; Dry etching; Fabrication; Indium phosphide; Ion beams; Light sources; Optical scattering; Performance evaluation; Photonic crystals; Resists; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205315

Filename

1205315