Title :
Extraordinary tunnel magnetoresistance in half metallic ferromagnetic devices
Author :
Kim, T.W. ; Hwang, Injun ; Kim, Y.K. ; Gambino, R. ; Park, Wanjun
Author_Institution :
Samsung Adv. Inst. of Technol., Kiheung, South Korea
Abstract :
Magnetic tunnel junctions (MTJ) with large tunnelling magnetoresistance are described. The MTJs are comprised of a half-metallic ferromagnetic Co2MnSi (a Heusler alloy) layer, AlOx as the insulating tunnel barrier, and a ferromagnetic layer of CoFe. The CoFe layer is pinned by exchange coupling to antiferromagnetic IrMn capped with 60 nm of Ru to prevent oxidation of the antiferromagnetic layer. The Heusler alloy with well defined smooth surface roughness was deposited by sputtering on to oxidized silicon substrates using a seed layer of Ta.
Keywords :
aluminium compounds; antiferromagnetic materials; cobalt alloys; ferromagnetic materials; iridium alloys; iron alloys; magnetic multilayers; magnetic thin films; magnetoresistive devices; manganese alloys; semimetallic thin films; silicon alloys; sputtered coatings; surface roughness; tunnelling magnetoresistance; 60 nm; Co2MnSi-AlOx-CoFe; Heusler alloy; IrMn; Ru; SiO; antiferromagnetic layer; exchange coupling; ferromagnetic layer; half-metallic ferromagnets; insulating tunnel barrier; magnetic tunnel junctions; oxidation; seed layer; silicon substrates; sputtering; surface roughness; tunneling magnetoresistance; Antiferromagnetic materials; Cobalt alloys; Extraordinary magnetoresistance; Insulation; Iron alloys; Magnetic tunneling; Oxidation; Rough surfaces; Silicon alloys; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463664
