Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition

Author

Heller, Richard D. ; Walter, Gabriel ; Holonyak, Nick, Jr. ; Mathes, David T. ; Hull, Robert ; Dupuis, Russell D.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

89

Lastpage

91

Abstract

We have grown and characterized InP self-assembled quantum-dots embedded in In_0.49(Al_xGa_1-x)_0.51P. For In_0.49Al_0.51P/In_0.49(Al_xGa_1-x)_0.51P/In_0.49Ga_0.51P/InP QD+QW injection lasers, we have achieved and report CW lasing at 654 nm at 300K with greatly reduced threshold current densities.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; quantum well lasers; self-assembly; semiconductor device measurement; semiconductor quantum dots; CW lasing; In_0.49Al_0.51P-In_0.49(AlGa)_0.51P-In_0.49Ga_0.51P-InP; InGaP quantum well heterostructure lasers; InP quantum dot; InP self-assembled quantum-dots; injection lasers; metalorganic chemical vapor deposition; threshold current density; Chemical lasers; Chemical vapor deposition; Indium phosphide; Optical coupling; Pulsed laser deposition; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205319

Filename

1205319