Title :
Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition
Author :
Heller, Richard D. ; Walter, Gabriel ; Holonyak, Nick, Jr. ; Mathes, David T. ; Hull, Robert ; Dupuis, Russell D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We have grown and characterized InP self-assembled quantum-dots embedded in In0.49(AlxGa1-x)0.51P. For In0.49Al0.51P/In0.49(AlxGa1-x)0.51P/In0.49Ga0.51P/InP QD+QW injection lasers, we have achieved and report CW lasing at 654 nm at 300K with greatly reduced threshold current densities.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; quantum well lasers; self-assembly; semiconductor device measurement; semiconductor quantum dots; CW lasing; In0.49Al0.51P-In0.49(AlGa)0.51P-In0.49Ga0.51P-InP; InGaP quantum well heterostructure lasers; InP quantum dot; InP self-assembled quantum-dots; injection lasers; metalorganic chemical vapor deposition; threshold current density; Chemical lasers; Chemical vapor deposition; Indium phosphide; Optical coupling; Pulsed laser deposition; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205319
