Title :
Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level
Author :
Karlsson, K.F. ; Holtz, P.O. ; Moskalenko, E.S. ; Monemar, B. ; Schoenfeld, W.V. ; Garcia, J.M. ; Petroff, P.M.
Author_Institution :
Dept. of Phys., Linkoping Univ., Sweden
Abstract :
Pure photoluminescence spectra originating from a single InAs/GaAs quantum dot, which is small enough to possess only one single-electron level, are demonstrated. A symmetric fine structure of the exciton and the biexciton is observed.
Keywords :
III-V semiconductors; biexcitons; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; InAs-GaAs; InAs/GaAs quantum dot; biexciton; exciton; photoluminescence spectra; single electron level; Charge carrier processes; Electrons; Energy states; Excitons; Gallium arsenide; Luminescence; Photoluminescence; Quantum dots; Spontaneous emission; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205322
