Title :
Thermal stability of MTJ using Zr capping layer
Author :
Oh, S.C. ; Lee, J.E. ; Kim, H.-J. ; Ha, Y.K. ; Bae, J.S. ; Nam, K.T. ; Park, S.O. ; Kim, H.S. ; Chung, U-in ; Moon, J.T.
Author_Institution :
Process Dev. Team, Samsung Electron. Co., Ltd., Nongseo-Ri, South Korea
Abstract :
The simple stacking structure such as [Sub/Zr/AlOx/NiFe (or CoFeB)/capping layer] was prepared to investigate the changes of magnetic properties of free layer with annealing temperature. Ta, Ru, or Zr was used as the capping layer. Samples were annealed in a vacuum (below 1×10-6 Torr) for 1 hour under a magnetic field of 10 KOe. The magnetic properties were measured using vibrating sample magnetometer in sample with 1×1 cm2 area. The changes of the coupling field between the pinned layers through Ru as a function of annealing temperature for various pinned layer materials were also studied.
Keywords :
aluminium compounds; annealing; boron alloys; cobalt alloys; interface structure; iron alloys; magnetic multilayers; magnetic tunnelling; nickel alloys; ruthenium; tantalum; thermal stability; zirconium; 1 hour; PtMn-CoFe-Ru-CoFe-AlOx; PtMn-CoFe-Ru-CoFeB-AlOx; annealing temperature; capping layer; coupling field; free layer; magnetic properties; pinned layers; stacking structure; thermal stability; Annealing; Area measurement; Magnetic field measurement; Magnetic properties; Magnetometers; Stacking; Temperature; Thermal stability; Vibration measurement; Zirconium;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463670
