InP HEMT-based CPW amplifiers for 94 and 110 GHz

94 GHz and 110 GHz single- and two-stages amplifiers have been fabricated with our in-house 0.1 μm lattice-matched InP HEMT process. The single transistors show state-of-the-art performances for this gate length with extrinsic f_T and f_max of 185 and 300 GHz, respectively and a maximum available gain (MAG) of 8.3 dB at 110 GHz. The single-stage amplifiers designed and fabricated in our laboratory showed excellent peak gains of 7.6 dB and 6.5 dB at 94 and 110 GHz, respectively. Two-stages amplifiers showed gain in excess of 12 dB at these frequencies with a 3 dB bandwidth better than 10 GHz. To improve the prediction accuracy of the circuit simulator, all transmission lines and T-junctions were modeled with an electromagnetic simulator.