Title :
Double-gate HEMTs on transferred substrate
Author :
Wichmann, N. ; Duszynski, I. ; Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A.
Author_Institution :
Dept. Hyperfrequences et Semiconducteurs, IEMN, Villeneuve d´´Ascq, France
Abstract :
We report the fabrication and DC characterization of the first In0.52Al0.48Al0.48As/In0.53Ga0.47As double-gate HEMTs with simple-command (DG-HEMT-SC) and double-command (DG-HEMT-DC). These devices have been obtained by photolithography and by transferred substrate technique. Although layer structure has not been optimized, a maximum extrinsic transconductance of 460 mS/mm with a drain current Ids of 160mA/mm is achieved for 1.5 μm gate length DG-HEMT-SC. A large ratio Gm/Ids of 3V-1 is obtained, which indicates improvement of charge command efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; photolithography; 1.5 micron; 460 mS/mm; DC characterization; In0.52Al0.48Al0.48As-In0.53Ga0.47As; In0.52Al0.48Al0.48As/In0.53Ga0.47As; double-command; double-gate HEMTs; fabrication; maximum extrinsic transconductance; photolithography; simple-command; transferred substrate; transferred substrate technique; Bonding; Circuits; Cutoff frequency; Fabrication; HEMTs; Indium phosphide; MODFETs; Ohmic contacts; Substrates; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205327
