Title :
A 40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit
Author :
Murata, I. ; Kitabayashi, H. ; Shimizu, N. ; Kimura, S. ; Furuta, T. ; Watanabe, N. ; Sano, E.
Author_Institution :
NTT Network Innovation Labs., Japan
Abstract :
The authors describe an optoelectronic decision IC that is a monolithic combination of a uni-traveling-carrier photodiode and 0.1 /spl mu/m InAlAs-InGaAs-InP HEMTs for broadband optical fiber communication systems. The fabricated chip is packaged as an OEIC module, and 40 Gbit/s error-free operation is confirmed for an RZ data stream at the clock rate of 40 GHz for the first time.
Keywords :
HEMT integrated circuits; decision circuits; digital communication; field effect digital integrated circuits; indium compounds; integrated optoelectronics; microwave photonics; modules; optical communication equipment; photodiodes; 0.1 micron; 40 GHz; 40 Gbit/s; InAlAs-InGaAs-InP; InP HEMT decision circuit; RZ data stream; broadband optical fiber communication systems; error-free operation; monolithic digital OEIC module; uni-traveling-carrier photodiode; Broadband communication; Error-free operation; HEMTs; MODFETs; Monolithic integrated circuits; Optical fiber communication; Optoelectronic devices; Packaging; Photodiodes; Photonic integrated circuits;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861010
