Compact differential InP-based HBT VCO´s with a wide tuning range at W-band

Author

Baeyens, Y. ; Pullella, R. ; Dorschky, C. ; Mattia, J.-P. ; Kopf, R. ; Tsai, H.-S. ; Georgiou, G. ; Hamm, R. ; Wang, Y.C. ; Lee, Q. ; Chen, Y.-K.

Author_Institution

Lucent Technols., Murray Hill, NJ, USA

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

349

Abstract

Compact monolithic integrated differential VCO´s operating in W-band were realized using InP-based HBT´s. The oscillators, with a total chip size of 0.6 mm by 0.35 mm, are based on a balanced Colpitts-type topology with a coplanar transmission line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100 Gb/s digital logic.

Keywords

III-V semiconductors; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; 100 Gbit/s; 84 to 106 GHz; EHF; InP; InP-based HBT VCO; W-band; balanced Colpitts-type topology; base-collector junction; compact differential VCO; coplanar transmission line resonator; current mirror; monolithic integrated VCO; oscillation frequency tuning; wide tuning range; Circuit topology; Clocks; Coplanar transmission lines; Frequency; Heterojunction bipolar transistors; Mirrors; Optical resonators; Optical tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861012

Filename

861012