Title :
200 GHz fmax, fτ InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates
Author :
Kim, Y.M. ; Urteaga, M. ; Dahlstrom, M. ; Rodwell, M.J.W. ; Gossard, A.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
InP/In0.53Ga0.47As/InP Double Heterojunction Bipolar Transistors were grown on GaAs substrates using a high-thermal-conductivity InP metamorphic buffer layer. InP metamorphic buffer was selected because it has a large thermal conductivity, which is very important in high power device operation. 200 GHz fmax and 200 GHz fτ were obtained. This fmax is the highest reported for a metamorphic HBT. The breakdown voltage BVCEO was 6 V and the DC current gain β was 27. The base-collector reverse leakage current was 54 nA at VCB = 0.3V.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; thermal conductivity; 0.3 V; 54 nA; DC current gain; InP-In0.53Ga0.47As-InP; InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors; base-collector reverse leakage current; breakdown voltage; high power device operation; high-thermal-conductivity InP metamorphic buffer layer; metamorphic HBT; thermal conductivity; Buffer layers; Current density; Current measurement; Double heterojunction bipolar transistors; Gallium arsenide; Indium phosphide; Leakage current; Substrates; Thermal conductivity; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205334
