DocumentCode :
353072
Title :
Time domain global modeling of EM propagation in semiconductor using irregular grids
Author :
Hsiao-Ping Tsai ; Coccioli, R. ; Itoh, T.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
1
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
367
Abstract :
A time domain technique for the combined solution of Maxwell´s equations and transport equations on an irregular grid has been developed. The code implemented has been tested against analytical models and applied to characterize EM propagation at microwave frequencies in semiconductor slab with arbitrary doping profile.
Keywords :
MIMIC; MMIC; Maxwell equations; doping profiles; electromagnetic wave propagation; integrated circuit modelling; time-domain analysis; EM propagation; Maxwell´s equations; analytical models; arbitrary doping profile; irregular grids; semiconductor slab; time domain global modeling; transport equations; Charge carrier processes; Current density; Difference equations; Doping profiles; Finite difference methods; Frequency; Integral equations; Maxwell equations; Microwave circuits; Microwave devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.861022
Filename :
861022
Link To Document :
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