Interpolating wavelet scheme toward global modeling of microwave circuits

We use an interpolating wavelet scheme to solve the nonlinear partial differential equations that characterize the behavior of semiconductor devices. We apply this method to a typical field effect transistor. The I-V characteristics are obtained and the accuracy is compared with the basic finite difference scheme. An error of 2% is obtained with 90% reduction in the number of unknowns at steady state. This is the first step toward a unified numerical technique that uses wavelets to solve Maxwell´s equations and the semiconductor equations for global modeling of high-frequency circuits.