Title :
Photoluminescence comparation of InAs quantum dots with different capping
Author :
Wei, Y.-Q. ; Zhang, Z.Y. ; Wang, Z.G. ; Wang, S.M. ; Zhao, Q.X. ; Wang, X.D. ; Larsson, A.
Author_Institution :
Photonics Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We have studied the effect of different cap layers on optical property of InAs quantum dots (QDs) on GaAs (100) substrate. Temperature dependent photoluminescence (PL) indicates that the PL integrated Zn intensity from the ground state of InAs QDs capped with an intermediate InAlAs/InGaAs combined layer drops very little as compared to QDs capped with a thin InGaAs or GaAs layer from 15 K up to room temperature. PL integrated intensity ratio of the first excited to ground states for InAs QDs capped with an intermediate InAlAs/InGaAs layer is unexpectedly decreased with increasing temperature, which we tentatively attribute to phonon bottleneck effect.
Keywords :
III-V semiconductors; excited states; ground states; indium compounds; phonons; photoluminescence; semiconductor quantum dots; spectral line intensity; 15 to 300 K; GaAs; InAlAs-InGaAs; InAs; InAs quantum dots; PL intensity; excited states; ground state; optical property; phonon bottleneck effect; photoluminescence; Gallium arsenide; Indium compounds; Indium gallium arsenide; Land surface temperature; Phonons; Photoluminescence; Quantum dots; Stationary state; Temperature dependence; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205340
