Photoluminescence comparation of InAs quantum dots with different capping

Author

Wei, Y.-Q. ; Zhang, Z.Y. ; Wang, Z.G. ; Wang, S.M. ; Zhao, Q.X. ; Wang, X.D. ; Larsson, A.

Author_Institution

Photonics Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2003

fDate

12-16 May 2003

Firstpage

168

Lastpage

170

Abstract

We have studied the effect of different cap layers on optical property of InAs quantum dots (QDs) on GaAs (100) substrate. Temperature dependent photoluminescence (PL) indicates that the PL integrated Zn intensity from the ground state of InAs QDs capped with an intermediate InAlAs/InGaAs combined layer drops very little as compared to QDs capped with a thin InGaAs or GaAs layer from 15 K up to room temperature. PL integrated intensity ratio of the first excited to ground states for InAs QDs capped with an intermediate InAlAs/InGaAs layer is unexpectedly decreased with increasing temperature, which we tentatively attribute to phonon bottleneck effect.

Keywords

III-V semiconductors; excited states; ground states; indium compounds; phonons; photoluminescence; semiconductor quantum dots; spectral line intensity; 15 to 300 K; GaAs; InAlAs-InGaAs; InAs; InAs quantum dots; PL intensity; excited states; ground state; optical property; phonon bottleneck effect; photoluminescence; Gallium arsenide; Indium compounds; Indium gallium arsenide; Land surface temperature; Phonons; Photoluminescence; Quantum dots; Stationary state; Temperature dependence; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205340

Filename

1205340