DocumentCode
3530781
Title
Reliability investigations of 1.55 μm bulk semiconductor optical amplifier using functional parameter measurements
Author
Huyghe, S. ; Béchou, L. ; Danto, Y. ; Laffitte, D. ; Boddaert, X. ; Volto, P. ; Denolle, A. ; Coquelin, A. ; Ollivier, C. ; Keller, D. ; Porcheron, C. ; Crottini, A. ; Squedin, S. ; Renaud, M.
Author_Institution
Lab. IXL, Bordeaux I Univ., Talence, France
fYear
2003
fDate
12-16 May 2003
Firstpage
171
Lastpage
174
Abstract
We report results of ageing tests (270 mA, 100°C) applied to 1.55 μm Semiconductor Optical Amplifier (SOA) of 500 μm length active region for reliability investigations and show the strong relationship between functional parameters and their drifts versus ageing time.
Keywords
III-V semiconductors; ageing; gallium arsenide; indium compounds; semiconductor device reliability; semiconductor optical amplifiers; 1.55 μm bulk semiconductor optical amplifier; 1.55 mm; 100 degC; 270 mA; 500 μm length active region; 500 mm; InP-InGaAs; functional parameter measurements; reliability; Aging; Optical devices; Optical mixing; Optical waveguides; Optical wavelength conversion; Qualifications; Semiconductor device reliability; Semiconductor optical amplifiers; Telecommunication network reliability; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205341
Filename
1205341
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