Theoretical study of laser characteristics of InPAsN/GaInAsP/InP laser diode using first-principles method

Author

Takizawa, Toshiyuki ; Harris, James S.

Author_Institution

Semicond. Devices Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

178

Lastpage

181

Abstract

We have estimated the material parameters of InPAsN alloy using first-principles method and k·p perturbation theory. InPAsN alloy can easily achieve at 1.31 μm wavelength with slight N incorporation. The characteristics of InPAsN/GaInAsP laser diode are also investigated and can realize an excellent high-temperature characteristics. InPAsN material is superior to the conventional GaInAsP materials in the application of 1.31 μm optical-fiber communications and has potential to reach at 1.55 μm wavelength.

Keywords

ab initio calculations; gallium arsenide; gallium compounds; indium compounds; k.p calculations; perturbation techniques; semiconductor lasers; 1.31 μm optical-fiber communications; 1.31 micron; 1.55 micron; InPAsN-GaInAsP-InP; InPAsN/GaInAsP/InP laser diode; first-principles method; k·p perturbation theory; laser characteristics; Conducting materials; Diode lasers; Indium phosphide; Laser theory; Nitrogen; Optical materials; Semiconductor lasers; Semiconductor materials; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205343

Filename

1205343