Title :
Theoretical study of laser characteristics of InPAsN/GaInAsP/InP laser diode using first-principles method
Author :
Takizawa, Toshiyuki ; Harris, James S.
Author_Institution :
Semicond. Devices Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
We have estimated the material parameters of InPAsN alloy using first-principles method and k·p perturbation theory. InPAsN alloy can easily achieve at 1.31 μm wavelength with slight N incorporation. The characteristics of InPAsN/GaInAsP laser diode are also investigated and can realize an excellent high-temperature characteristics. InPAsN material is superior to the conventional GaInAsP materials in the application of 1.31 μm optical-fiber communications and has potential to reach at 1.55 μm wavelength.
Keywords :
ab initio calculations; gallium arsenide; gallium compounds; indium compounds; k.p calculations; perturbation techniques; semiconductor lasers; 1.31 μm optical-fiber communications; 1.31 micron; 1.55 micron; InPAsN-GaInAsP-InP; InPAsN/GaInAsP/InP laser diode; first-principles method; k·p perturbation theory; laser characteristics; Conducting materials; Diode lasers; Indium phosphide; Laser theory; Nitrogen; Optical materials; Semiconductor lasers; Semiconductor materials; Stimulated emission; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205343
