E-beam pumped GaInP/AlGaInP MQW VCSEL

Author

Bondarev, V.Yu. ; Kozlovsky, V.I. ; Krysa, A.B. ; Roberts, J.S. ; Skasyrsky, Ya.K.

Author_Institution

P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia

fYear

2003

fDate

12-16 May 2003

Firstpage

182

Lastpage

185

Abstract

A 17-period Ga_0.5In_0.5P/(Al_0.7Ga_0.3)_0.5In_0.5P quantum well structure was grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10° from [001] to [111]A. A microcavity with dielectric oxide mirrors was fabricated on the basis of this structure. Lasing at 619 nm with 0.7 W output power was achieved under scanning electron beam longitudinal pumping at room temperature. It is shown that low threshold lasing requires the position of the QWs to coincide with the antinodes of the cavity mode, at the maximum of the gain spectrum due to the QW ground state.

Keywords

MOCVD coatings; aluminium compounds; gallium compounds; indium compounds; microcavities; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 0.7 W; 17-period Ga_0.5In_0.5P/(Al_0.7Ga_0.3)_0.5In_0.5P quantum well structure; 619 nm; Ga_0.5In_0.5P-(Al_0.7Ga_0.3)_0.5In_0.5P; GaAs substrate; GaInP-AlGaInP; cavity mode; dielectric oxide mirrors; e-beam pumped GaInP/AlGaInP MQW VCSEL; gain spectrum; low threshold lasing; metalorganic vapor phase epitaxy; microcavity; scanning electron beam longitudinal pumping; Dielectric substrates; Electron beams; Epitaxial growth; Gallium arsenide; Land surface temperature; Microcavities; Mirrors; Power generation; Quantum well devices; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205344

Filename

1205344