Title :
Patterning effect at 40 Gbit/s of wavelength converter utilizing cross-phase modulation in InGaAsP/InP electroabsorption modulator
Author :
Nishimura, Kohsuke ; Inohara, Ryo ; Tsurusawa, Munefumi ; Usami, Masashi
Author_Institution :
KDDI R&D Labs. Inc., Saitama, Japan
Abstract :
Cross-absorption and cross-phase modulation in an InGaAsP/InP electroabsorption modulator (EAM) were experimentally analyzed. The patterning effect of the EAM-based delayed-interferometric wavelength converter was studied by numerical simulation based on the experimental results.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical wavelength conversion; wavelength division multiplexing; 40 Gbit/s; EAM-based delayed-interferometric wavelength converter; InGaAsP-InP; InGaAsP/InP electroabsorption modulator; cross-absorption; cross-phase modulation; patterning effect; wavelength converter; Absorption; Indium phosphide; Insertion loss; Nonlinear optics; Optical fiber networks; Optical modulation; Optical signal processing; Optical wavelength conversion; Phase modulation; Polarization;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205348
