• DocumentCode
    3530951
  • Title

    Variable gain CMOS potentiostat for dissolved oxygen sensor

  • Author

    Ng, Mei Yee ; Yusoff, Yuzman

  • Author_Institution
    MIMOS Berhad, Kuala Lumpur, Malaysia
  • fYear
    2010
  • fDate
    3-4 Aug. 2010
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    This paper presents a variable gain potetiostat designed for the electrochemical control of Dissolved Oxygen (DO) sensors. The design is targeted for implementation using MIMOS 0.35 um CMOS process technology at 3.3V. The potentiostat amplifier for dissolved oxygen utilizes three electrodes (working, reference and counter) which work together to form the electrochemical reaction. There are several types of DO sensor available including membrane-based, also known as Clark electrode, and microelectrode-based. This results in different sensitivity and output current when different types of sensor are used on the same test solution. The variable gain feature is added in the design to cater to different DO sensors that are available in the market. This design implements four different gain values to accommodate four different current ranges. The resistor values chosen largely depend on the type of DO sensor used and the range of output current it produces. The transimpedance amplifier used has also been simulated in the post-extracted view across process corners to ensure its compatibility with the different feedback resistor values. The complete integrated design is then simulated to be working within a power supply of 2.2 V to 3.6 V, temperature of 0 to 90°C and has an operating range of 0 to 100 uA sensor current. The final chip has an area of 1.7 mm × 1.7 mm and has been simulated to be in working order.
  • Keywords
    CMOS analogue integrated circuits; gas sensors; microelectrodes; operational amplifiers; resistors; CMOS process technology; MIMOS; dissolved oxygen sensor; potentiostat amplifier; size 0.35 mum; temperature 0 degC to 90 degC; transimpedance amplifier; variable gain CMOS potentiostat; voltage 2.2 V; voltage 3.3 V; CMOS process; CMOS technology; Counting circuits; Electric variables control; Electrodes; Gain; MIMO; Oxygen; Resistors; Temperature sensors; Dissolved Oxygen sensor; Read out IC; potentiostat; variable gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4244-7809-5
  • Type

    conf

  • DOI
    10.1109/ASQED.2010.5548221
  • Filename
    5548221