DocumentCode
3530957
Title
InAs/AlSb HFETs with fτ and fmax above 150 GHz for low-power MMICs
Author
Bergman, J. ; Nagy, G. ; Sullivan, G. ; Brar, B. ; Kadow, C. ; Lin, H.-K. ; Gossard, A. ; Rodwell, M.
Author_Institution
Rockwell Sci. Co., Thousand Oaks, CA, USA
fYear
2003
fDate
12-16 May 2003
Firstpage
219
Lastpage
222
Abstract
Very low-power InAs/AlSb HFETs with excellent RF performance are reported. These metamorphic HFETs on GaAs substrates combine high microwave gm of at least 1.1 S/mm with low parasitic resistances to offer simultaneous measured fτ and fmax values of 160 GHz for both figures of merit. This performance is obtained at a drain bias voltage of only 0.35 V for an HFET with a 0.25-μm gate length. The high current gain (fτ) is attributable to the improved charge control due to scaling of the barrier thickness to 180 Å. The maximum power gain (fmax) depends on both gm and the HFET output conductance, which is fundamentally limited by the low breakdown voltage gap of the InAs channel (Eg = 0.36 eV).
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; low-power electronics; semiconductor device measurement; 0.25 micron; 0.35 V; 1.1 S/mm; 150 GHz; 180 Å; InAs-AlSb; InAs/AlSb HFETs; RF performance; barrier thickness; current gain; low breakdown voltage gap; low-power HFETs; low-power MMICs; maximum power gain; output conductance; parasitic resistance; Electric breakdown; Electrical resistance measurement; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MMICs; MODFETs; Radio frequency; Sheet materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205353
Filename
1205353
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