DocumentCode :
3531001
Title :
W-band power metamorphic HEMT technology on GaAs
Author :
Herrick, K.J. ; Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
231
Lastpage :
232
Abstract :
Our 0.15 um power MHEMT development at W-band includes comparison of single (53%) and split channel (53/43%) material. Preliminary single stage microstrip amplifier results yield 225 mW/mm and >10dB small signal gain at 95 GHz.
Keywords :
III-V semiconductors; gallium arsenide; millimetre wave power transistors; power HEMT; semiconductor device measurement; 0.15 micron; 10 dB; 95 GHz; GaAs; MHEMT; W-band power metamorphic HEMT technology; single stage microstrip amplifier; split channel material; Breakdown voltage; Gain measurement; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Power amplifiers; Power measurement; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205356
Filename :
1205356
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3531001
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