DocumentCode :
3531005
Title :
Frequency dependence in RF gain resonance by negative photocurrent resistance of electroabsorption modulator
Author :
Shin, D.S.
Author_Institution :
Dept. of Appl. Phys., Hanyang Univ., Ansan, South Korea
fYear :
2010
fDate :
5-9 Oct. 2010
Firstpage :
118
Lastpage :
120
Abstract :
Negative differential photocurrent resistance of the electroabsorption modulator can enhance the RF gain by inducing `resonance´ in the voltage drop across the junction at very high optical power. In this paper, it is examined that the maximum RF gain value enhanced by the negative photocurrent resistance reduces as the modulation frequency is increased. For the modulator capacitance of 1 pF, as the frequency is increased from 0.5 to 1.0 and 2.0 GHz, the maximum RF gain is reduced from 21 to 15 and 9 dB, respectively.
Keywords :
capacitance; electro-optical modulation; microwave photonics; negative resistance devices; optical resonators; electroabsorption modulator; frequency dependent RF gain resonance; modulation frequency; modulator capacitance; negative differential photocurrent resistance; Frequency modulation; Gain; Optical saturation; Photoconductivity; Radio frequency; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics (MWP), 2010 IEEE Topical Meeting on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-7824-8
Type :
conf
DOI :
10.1109/MWP.2010.5664209
Filename :
5664209
Link To Document :
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