DocumentCode :
3531008
Title :
A lower-band UWB LNA with integrated 7kV/15kV ESD protection
Author :
Tang, He ; Wang, Xin ; Qin, B. ; Fan, S. ; Fang, Q. ; Lin, L. ; Liu, J. ; He, J. ; Zhao, H. ; Wang, Albert
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fYear :
2010
fDate :
3-4 Aug. 2010
Firstpage :
98
Lastpage :
101
Abstract :
A 3.1-4.8GHz LNA for lower-band UWB transceiver front-end ICs designed in a commercial 0.18μm CMOS is presented. The LNA features current reuse, resistive feedback, complete and robust full-chip ESD protection. LNA circuits with and without ESD protection are compared to minimize ESD-induced LNA performance degradation. Experiment shows a gain of 13.2dB, excellent input reflection of -13.4dB, NF of 4.82dB for LNA with ESD protection, and the best reported ESD protection level of >7.65kV at I/O and >15kV for supply lines.
Keywords :
CMOS integrated circuits; electrostatic discharge; low noise amplifiers; transceivers; ultra wideband technology; CMOS; ESD protection; UWB transceiver front-end IC; frequency 3.1 GHz to 4.8 GHz; gain 13.2 dB; lower-band UWB LNA; size 0.18 micron; voltage 15 kV; voltage 7 kV; Degradation; Electrostatic discharge; Feedback; Impedance matching; Integrated circuit noise; Noise measurement; Protection; Radio frequency; Robustness; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4244-7809-5
Type :
conf
DOI :
10.1109/ASQED.2010.5548225
Filename :
5548225
Link To Document :
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