• DocumentCode
    3531026
  • Title

    GaAs-based quantum-cascade laser diodes

  • Author

    Anders, S. ; Gornik, E. ; Schrenk, W. ; Strasser, G.

  • Author_Institution
    Inst. of Solid-State Electron., Tech. Univ. of Vienna, Wien, Austria
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    In this contribution, we discuss our recent results on GaAs-based quantum cascade lasers. In general, we strive to achieve high-power room temperature operation. The best performance in GaAs-based Fabry-Perot quantum cascade laser diodes (pulsed operation) show peak powers of more than 3W at liquid nitrogen temperatures and more than 300 mW at room temperature at an emission wavelength of 9 microns. Lasing up to 100°C lattice temperature was detected. Single mode emitting distributed feedback lasers show more than 80mW optical peak power at room temperature. Furthermore, to explore the spectral behavior of the lasers, we processed cavities of different geometries, that is, disk- and ring-shaped cavities.
  • Keywords
    III-V semiconductors; gallium arsenide; laser cavity resonators; quantum cascade lasers; semiconductor device measurement; 100 degC; 3 W; 300 K; 300 mW; 77 K; 80 mW; 9 micron; GaAs; GaAs-based Fabry-Perot quantum cascade laser diodes; disk-shaped cavities; ring-shaped cavities; single mode emitting distributed feedback lasers; Diode lasers; Distributed feedback devices; Fabry-Perot; Laser feedback; Laser modes; Nitrogen; Optical pulses; Quantum cascade lasers; Ring lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205358
  • Filename
    1205358