DocumentCode
3531026
Title
GaAs-based quantum-cascade laser diodes
Author
Anders, S. ; Gornik, E. ; Schrenk, W. ; Strasser, G.
Author_Institution
Inst. of Solid-State Electron., Tech. Univ. of Vienna, Wien, Austria
fYear
2003
fDate
12-16 May 2003
Firstpage
235
Lastpage
238
Abstract
In this contribution, we discuss our recent results on GaAs-based quantum cascade lasers. In general, we strive to achieve high-power room temperature operation. The best performance in GaAs-based Fabry-Perot quantum cascade laser diodes (pulsed operation) show peak powers of more than 3W at liquid nitrogen temperatures and more than 300 mW at room temperature at an emission wavelength of 9 microns. Lasing up to 100°C lattice temperature was detected. Single mode emitting distributed feedback lasers show more than 80mW optical peak power at room temperature. Furthermore, to explore the spectral behavior of the lasers, we processed cavities of different geometries, that is, disk- and ring-shaped cavities.
Keywords
III-V semiconductors; gallium arsenide; laser cavity resonators; quantum cascade lasers; semiconductor device measurement; 100 degC; 3 W; 300 K; 300 mW; 77 K; 80 mW; 9 micron; GaAs; GaAs-based Fabry-Perot quantum cascade laser diodes; disk-shaped cavities; ring-shaped cavities; single mode emitting distributed feedback lasers; Diode lasers; Distributed feedback devices; Fabry-Perot; Laser feedback; Laser modes; Nitrogen; Optical pulses; Quantum cascade lasers; Ring lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205358
Filename
1205358
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