Title :
A new method in characterizing the nonlinear current model of MESFETs using single-tone excitation
Author :
Chun-Wah Fan ; Cheng, K.-K.M.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
This paper presents a novel technique for extracting the two-dimensional Taylor series coefficients of a MESFET. Unknown coefficients are determined from harmonic power measurement using a single-tone excitation. The FET is operated in a quasi-common-gate configuration which allow coefficients to be extracted with enhanced accuracy. For comparison, coefficients obtained by the proposed method and a two-tone approach are given.
Keywords :
Schottky gate field effect transistors; semiconductor device measurement; semiconductor device models; MESFET; harmonic power measurement; nonlinear current model; parameter extraction; quasi-common-gate FET; single-tone excitation; two-dimensional Taylor series; Circuits; Differential equations; Electronic mail; FETs; MESFETs; Power engineering and energy; Power measurement; Power system harmonics; Resistors; Taylor series;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861064
