Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs

Non-linear MOSFET models are mostly indirectly derived from DC, C-V and S-parameter measurements. We present two accurate modelling techniques that directly determine the MOSFET state-functions from high-frequency vectorial large-signal measurements. The parameter optimisation method quickly generates models for specific applications, while the extraction method is preferred to obtain general models.