DocumentCode :
3531076
Title :
Distributed reflector lasers integrated with passive grating region by using lateral quantum confinement effect
Author :
Ohira, Kazuya ; Murayama, Tomonori ; Yagi, Hideki ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
251
Lastpage :
254
Abstract :
By using a lateral quantum confinement effect, a new type of distributed reflector (DR) laser consisting of a wirelike active section and a passive DBR section with quantum-wire structure was demonstrated. As a result, a low threshold current density Jth=320 A/cm2 (Ith = 15.4 mA) was obtained for a mesa-stripe width of 20 μm, an active section length of 240 μm and a passive DBR section length of 440 μm. A strong asymmetric output ratio from the front to the rear facet of 28, which is inherent in DR lasers, was also achieved.
Keywords :
distributed Bragg reflectors; quantum well lasers; semiconductor device measurement; semiconductor lasers; semiconductor quantum wires; 15.4 mA; 20 micron; 240 micron; 440 micron; distributed reflector lasers; lateral quantum confinement effect; passive grating region; quantum-wire structure; semi-conductor lasers; Distributed Bragg reflectors; Distributed feedback devices; Gratings; Laser feedback; Potential well; Power lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205362
Filename :
1205362
Link To Document :
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