DocumentCode :
353109
Title :
Fully physical coupled electro-thermal simulations and measurements of power FETs
Author :
Johnson, R.G. ; Batty, W. ; Panks, A.J. ; Snowden, C.M.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
Volume :
1
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
461
Abstract :
A fully physical coupled electro-thermal model is presented. It is fast, efficient, suitable for CAD applications and capable of describing power FETs, MMICs and MMIC arrays. Results are presented which show the model gives good agreement with measurements for large power devices.
Keywords :
circuit CAD; field effect MMIC; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; CAD applications; MMIC arrays; MMICs; coupled electro-thermal simulations; large power devices; power FETs; semiconductor device measurements; Electric resistance; Electric variables measurement; Equations; HEMTs; MMICs; MODFETs; Microwave FETs; Power measurement; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.861070
Filename :
861070
Link To Document :
بازگشت