• DocumentCode
    3531090
  • Title

    Repetition rate and wavelength tuning of monolithic 40 GHz mode-locked lasers based on InP

  • Author

    Kaiser, R. ; Huttl, B. ; Rehbein, W. ; Stolpe, H. ; Heidrich, H. ; Fidorra, S. ; Stenzel, R.

  • Author_Institution
    Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    The repetition rate and wavelength tuning behaviour of monolithically integrated 40 GHz modelocked lasers based on GaInAsP/InP for passive and hybrid mode-locking have been investigated experimentally. Large repetition rate shifts (≥500 MHz) and locking bandwidths (100... 500 MHz) are demonstrated by only changing the dc gain and absorber bias conditions. Simultaneously, the width of the 2 ps pulses and low timing jitter values (<300 fs) are kept almost unchanged. A pronounced influence of wavelength tuning on other pulse characteristics and repetition rate tuning is not observable. The achieved tuning ranges are discussed in relation to existing fabrication tolerances.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; semiconductor device measurement; semiconductor lasers; GaInAsP-InP; mode-locked lasers; repetition rate; wavelength tuning; Frequency; High speed optical techniques; Indium phosphide; Laser mode locking; Laser tuning; Optical device fabrication; Optical pulses; Optical tuning; Optical waveguides; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205363
  • Filename
    1205363