DocumentCode
3531090
Title
Repetition rate and wavelength tuning of monolithic 40 GHz mode-locked lasers based on InP
Author
Kaiser, R. ; Huttl, B. ; Rehbein, W. ; Stolpe, H. ; Heidrich, H. ; Fidorra, S. ; Stenzel, R.
Author_Institution
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
fYear
2003
fDate
12-16 May 2003
Firstpage
255
Lastpage
258
Abstract
The repetition rate and wavelength tuning behaviour of monolithically integrated 40 GHz modelocked lasers based on GaInAsP/InP for passive and hybrid mode-locking have been investigated experimentally. Large repetition rate shifts (≥500 MHz) and locking bandwidths (100... 500 MHz) are demonstrated by only changing the dc gain and absorber bias conditions. Simultaneously, the width of the 2 ps pulses and low timing jitter values (<300 fs) are kept almost unchanged. A pronounced influence of wavelength tuning on other pulse characteristics and repetition rate tuning is not observable. The achieved tuning ranges are discussed in relation to existing fabrication tolerances.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; semiconductor device measurement; semiconductor lasers; GaInAsP-InP; mode-locked lasers; repetition rate; wavelength tuning; Frequency; High speed optical techniques; Indium phosphide; Laser mode locking; Laser tuning; Optical device fabrication; Optical pulses; Optical tuning; Optical waveguides; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205363
Filename
1205363
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