Title :
Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped vertical-external-cavity surface-emitting lasers grown by MOCVD
Author :
Symonds, C. ; Sagne, I. ; Oudar, J.L. ; Bouchoule, S. ; Garnache, A. ; Baggren, J. ; Strassner, M.
Author_Institution :
Lab. pour la Photonique et les Nanostructures, Marcoussis, France
Abstract :
Optically pumped GaAs-based vertical-external-cavity surface-emitting lasers (OP-VECSEL) have generated high average powers in circular diffraction-limited output beams in continuous-wave (CW) operation and in ultra-short pulse operation at wavelengths around 1 μm. This type of semiconductor laser overcomes beam quality limitations of edge-emitting diode lasers and power restrictions of electrically pumped surface-emitting lasers, especially with InP-based structures. Recently, CW 300K operation of a 1.5 μm nonmonolithic InP-based OP-VECSEL has been reported. Here, we report on CW operation of a monolithic lnP based OP-VECSEL at 1.55 μm at room temperature and of achieved output powers of as much as 4 mW (T=0°).
Keywords :
III-V semiconductors; indium compounds; optical pumping; semiconductor device measurement; surface emitting lasers; 1 micron; 1.5 micron; 300 K; 4 mW; InP; MOCVD; OP-VECSEL; RT CW operation; monolithic InP-based optically-pumped vertical-external-cavity surface-emitting lasers; semiconductor laser; Laser excitation; MOCVD; Optical pumping; Optical surface waves; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205364
