Title :
Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers
Author :
Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
1.26-μm-emitting MOCVD-grown InGaAsN single quantum-well lasers with barriers of Eg=1.62 eV InGaAsP exhibit a room-temperature threshold current density of 440 A/cm2 and a characteristic temperature To as high as 128 K and 98 K in the temperature ranges of 10-50°C and 50-100°C, respectively. A growth pause annealing technique is found to be critical for achieving high photoluminescence intensity. Higher-bandgap barrier materials increase the valence band offset and lead to suppression of carrier leakage, which potentially results in improved temperature characteristics of the InGaAsN quantum-well lasers.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; leakage currents; photoluminescence; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; spectral line intensity; 1.26 micron; 10 to 50 degC; 128 K; 50 to 100 degC; 98 K; InGaAsN-InGaAsP-GaAs; MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers; carrier leakage; growth pause annealing technique; photoluminescence intensity; valence band offset; Annealing; Chemical lasers; Conducting materials; Gallium arsenide; Optical materials; Photoluminescence; Quantum well lasers; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205367
