Title :
MOVPE growth of 1.3 μm GaInNAs/GaAs quantum well lasers with high performance
Author :
Ishizuka, T. ; Iguchi, Y. ; Yamada, T. ; Katsuyama, T. ; Takagishi, S. ; Murata, M. ; Hashimoto, J. ; Ishida, A.
Author_Institution :
Optoelectronics R&D Labs., Sumitomo Electr. Industries, Ltd, Hyogo, Japan
Abstract :
We have investigated growth and annealing condition of GaInNAs by MOVPE using all organometallic sources. Considerable improvement of optical properties of GaInNAs/GaAs quantum well structures has been achieved. And also high performance GaInNAs lasers operating at 1.3 μm has been demonstrated with threshold current density of 580A/cm2, which is among the lowest value reported.
Keywords :
III-V semiconductors; MOCVD; annealing; gallium arsenide; indium compounds; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; 1.3 μm GaInNAs/GaAs quantum well lasers; 1.3 micron; GaInNAs-GaAs; MOVPE growth; annealing; optical properties; performance; threshold current density; Annealing; Degradation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical materials; Quantum well lasers; Research and development; Temperature dependence; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205368
