Carbon-doped InAl(Ga)As for high speed laser diode

Author

Kurihara, Kaori ; Shimoyama, Kenji

Author_Institution

Mitsubishi Chem. Corp., Ibaraki, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

281

Lastpage

284

Abstract

Carbon doping in an InAlAs material system grown by LP-MOVPE has been studied. Reduction of oxygen in carbon-doped InAlAs has been achieved by investigating the incorporation mechanisms of carbon and oxygen. The effect of removal of oxygen by bromine has also been found for the first time. Through use of these growth procedures, we have successfully made a C-doped InAlAs with low oxygen contamination. In the C-InAlAs layer, no electrical compensation was found. Finally, high power laser operation over 50 mW has been demonstrated with a C-InAlAs SCH layer, which was located close to the active region. No degradation after the excess current injection was confirmed. In conclusion, C-doped InAlAs layers with low oxygen contamination have superior electrical and optical qualities and are promising for application in high speed laser diodes.

Keywords

III-V semiconductors; aluminium compounds; carbon; gallium arsenide; indium compounds; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; 50 mW; InAlGaAs:C; carbon-doped InAl(Ga)As; high power laser operation; high speed laser diode; low oxygen contamination; Atomic measurements; Contamination; Diode lasers; Doping; High speed optical techniques; Indium compounds; Indium phosphide; Optical materials; Organic materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205370

Filename

1205370