Title :
Photonic crystal lasers for nano-photonics
Author :
Lee, Y.-H. ; Ryu, H.Y. ; Kim, S.H. ; Kwon, S.H.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
Characteristics of low threshold, high-index contrast, 2-D InP slab triangular- and square-lattice photonic crystal band edge lasers operating near 1,550 nm are summarized. Surface-emitting lasing actions are observed near the third Γ points and the band edges. A very low threshold of 35 μW is observed from the laser operating near the third TE-like mode Γ point. The lasing occurs from a very small pump area of 6 μm in diameter.
Keywords :
III-V semiconductors; indium compounds; photonic crystals; semiconductor device measurement; semiconductor lasers; 1550 nm; 35 muW; 6 micron; InP; band edge; nano-photonics; photonic crystal lasers; surface-emitting lasing actions; third TE-like mode Γ point; Distributed feedback devices; Laser feedback; Laser modes; Laser theory; Lattices; Photonic crystals; Pump lasers; Semiconductor lasers; Slabs; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205371
