Title :
In-plane resonant cavities in InP/GaInAsP/InP with photonic crystal boundaries
Author :
Mulot, M. ; Qiu, M. ; Swillo, M. ; Jaskorzynska, B. ; Talneau, A. ; Anand, S.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
In-plane cavities with photonic crystal (PhC) boundaries were fabricated into an InP/GaInAsP/InP slab waveguide structure using Ar/Cl2 based chemically assisted ion beam etching. The cavities are realized as segments of different lengths bounded by two V-shaped double or single mirrors in straight photonic crystal waveguides and were designed to have resonance in the 1.55 μm wavelength range. The optical loss inside the PhC was determined by fitting the measured transmission spectra with two-dimensional finite-difference time-domain simulations. The best results were obtained for a 6.2 μm long resonant cavity with double mirrors for which a quality factor of 460 was obtained. The results demonstrate significant improvements in the quality of PhC fabrication in this material system.
Keywords :
III-V semiconductors; Q-factor; cavity resonators; finite difference time-domain analysis; gallium compounds; indium compounds; integrated optics; optical losses; photonic crystals; sputter etching; 6.2 micron; InP-GaInAsP-InP; InP/GaInAsP/InP slab waveguide structure; in-plane resonant cavities; ion beam etching; optical loss; photonic crystal boundaries; photonic crystal waveguides; quality factor; two-dimensional finite-difference time-domain simulation; Argon; Chemicals; Etching; Indium phosphide; Ion beams; Mirrors; Optical waveguides; Photonic crystals; Resonance; Slabs;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205374
