Fabrication and characterization of SOA and phase shifter integrated interferometer all-optical switches by single-step GaInAsP/InP selective area MOVPE

Author

Miyashita, Daisuke ; Song, Xueliang ; Zhang, Zhenrui ; Futakuchi, Naoki ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

300

Lastpage

303

Abstract

Simple, high-yield fabrication of GaInAsP/InP Mach-Zehnder and Michelson interferometer-based all-optical switches, integrated with semiconductor optical amplifiers (SOAs) and phase shifters, has been made possible by one-step MOVPE selective area growth (SAG). The SAG method yields smooth junction between the active and passive regions of the all-optical switches. Static all-optical switching performance includes 24dB extinction ratio and 6π phase shift by 18dBm. By utilizing integrated phase shifters, we could also calibrate the extinction ratio.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; Michelson interferometers; gallium arsenide; indium compounds; integrated optics; optical phase shifters; optical switches; GaInAsP-InP; Mach-Zehnder interferometer-based all-optical switches; Michelson interferometer-based all-optical switches; SOA; phase shifter integrated interferometer all-optical switches; selective area MOVPE; semiconductor optical amplifiers; Epitaxial growth; Epitaxial layers; Extinction ratio; Indium phosphide; Optical device fabrication; Optical interferometry; Optical switches; Phase shifters; Phase shifting interferometry; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205375

Filename

1205375