Title :
High quality epitaxial growth on new InP/Si substrate
Author :
Kostrzewa, M. ; Regreny, P. ; Besland, M.P. ; Leclercq, J.L. ; Grenet, G. ; Rojo-Romeo, P. ; Jalaguier, E. ; Perreau, P. ; Moriceau, H. ; Marty, O. ; Hollinger, G.
Author_Institution :
Ecole Centrale de Lyon, Ecully, France
Abstract :
We report here on the bonding of a thin InP(001) layer onto a Si host substrate via silicon dioxide, to be used as a substrate for heteroepitaxy. With this end in mind, these new InP/SiO2/Si substrates were compared to standard InP substrates through the growth by Solid Source Molecular Beam Epitaxy of (lattice-matched) InP thick layers and (-0.8% lattice-mismatched) InAs0.25P0.75 and In0.65Ga0.35As thick layers. The layers thus obtained were characterized by in-situ Reflection High-Energy Electron Diffraction (RHEED), and ex-situ Atomic Force Microscopy (AFM), double crystal x-ray diffraction (DXRD) and photoluminescence (PL). Finally, the quality of the InP/SiO2/InP heterostructure is assessed as a substrate for optoelectronics by the photoluminescence spectrum of a 60 Å thick InAs0.65P0.35 strained quantum well confined by 0.2 μm thick InP barriers. We conclude that all the characteristics required for optoelectronic application are fulfilled.
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optoelectronic devices; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; 0.2 micron; 60 Å; AFM; In0.65Ga0.35As; InAs0.25P0.75; InAs0.65P0.35; InP; InP-SiO2-Si; InP/Si substrate; InP/SiO2/Si substrates; RHEED; Si; Solid Source Molecular Beam Epitaxy; bonding; double crystal x-ray diffraction; heteroepitaxy; high quality epitaxial growth; optoelectronics; photoluminescence; strained quantum well; thin InP(001) layer; Atomic force microscopy; Bonding; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Silicon compounds; Solids; Substrates; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205381
