Title :
Pulsed YAG-laser disordering of InGaAsP superlattices and its application to wavelength trimming of multi-λ gain-coupled DFB laser arrays
Author :
Asawamethapant, Weerachai ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan
Abstract :
We describe photo-absorption-induced disordering of superlattices by second-harmonic YAG laser pulses. The process is controllable by adjusting the number of pulse shots irradiated, pulse shot energy, and background temperature. Its application to wavelength channel adjustment, or wavelength trimming, of a 5-λ gain-coupled DFB laser array is presented.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beam effects; laser materials processing; laser tuning; quantum well lasers; semiconductor laser arrays; semiconductor superlattices; InGaAsP; InGaAsP superlattices; YAG; YAl5O12; background temperature; irradiated pulse shots; multi-wavelength gain-coupled DFB laser arrays; photo-absorption-induced disordering; pulse shot energy; pulsed YAG-laser disordering; second-harmonic YAG laser pulses; wavelength channel adjustment; wavelength trimming; Distributed feedback devices; Laser feedback; Laser theory; Laser transitions; Optical arrays; Optical device fabrication; Optical pulses; Quantum well lasers; Semiconductor laser arrays; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205386
