Crosstalk analysis in Carbon Nanotube interconnects and its impact on gate oxide reliability

The work analyses the crosstalk effects in Carbon Nanotube (CNT), and its impact on the gate oxide reliability. Using the existing models of CNT, the circuit parameters for CNT-bundle interconnect are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time (FIT) rate is calculated. A similar analysis is performed for Cu interconnects and comparisons are made with CNT based interconnect results. It has been found that the CNT based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.