Title :
Crosstalk analysis in Carbon Nanotube interconnects and its impact on gate oxide reliability
Author :
Das, Debaprasad ; Rahaman, Hafizur
Author_Institution :
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Shibpur, India
Abstract :
The work analyses the crosstalk effects in Carbon Nanotube (CNT), and its impact on the gate oxide reliability. Using the existing models of CNT, the circuit parameters for CNT-bundle interconnect are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk induced overshoot/undershoots have been estimated and the impact of the overshoot/undershoots on the gate oxide reliability in terms of failure-in-time (FIT) rate is calculated. A similar analysis is performed for Cu interconnects and comparisons are made with CNT based interconnect results. It has been found that the CNT based interconnect is more suitable in VLSI circuits as far as the gate oxide reliability is concerned.
Keywords :
VLSI; carbon nanotubes; crosstalk; equivalent circuits; integrated circuit interconnections; integrated circuit reliability; CNT-bundle interconnect; FIT rate; VLSI circuit; carbon nanotube interconnects; circuit parameter; crosstalk analysis; crosstalk effect; equivalent circuit; failure-in-time rate; gate oxide reliability; overshoot/undershoots; CMOS logic circuits; CMOS technology; Carbon nanotubes; Crosstalk; Delay; Equivalent circuits; Integrated circuit interconnections; Performance analysis; Very large scale integration; Voltage; Average Failure Rate (AFR); Carbon Nanotube (CNT); Crosstalk; Gate Oxide Reliability; Single-wall CNT (SWCNT);
Conference_Titel :
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4244-7809-5
DOI :
10.1109/ASQED.2010.5548255
