A 5 to 27 GHz MMIC power amplifier

Author

Kye-Ik Jeon ; Jae-Hak Lee ; Seung-Won Paek ; Dong-Wook Kim ; Won-Sang Lee ; Chae-Rok Lim ; Ho-Young Cha ; Hyung-Kyu Choi ; Ki-Woong Chung

Author_Institution

RF Device Team, LG Corp. Inst. of Technol., Seoul, South Korea

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

541

Abstract

A record of wideband 5 to 27 GHz power amplifier is achieved with 20 dB gain and 21 dBm output power in two stage monolithic form based on LGCIT´s 0.25 /spl mu/m PHEMT process. In design, we use a lossy matching technique to obtain a flat gain characteristic and use Cripps´ matching technique to obtain a flat output power characteristic. The chip size is compact 3.1 mm/spl times/1.2 mm. We present how to realize the wideband output, input and interstage matching networks.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; impedance matching; integrated circuit design; wideband amplifiers; 0.25 micron; 20 dB; 5 to 27 GHz; Cripps matching technique; MMIC power amplifier; PHEMT process; flat output power characteristic; lossy matching technique; two stage monolithic form; wideband input matching network; wideband interstage matching networks; wideband output matching network; wideband power amplifier; Broadband amplifiers; Equivalent circuits; FETs; Frequency; Gain; Impedance matching; MMICs; Power amplifiers; Power generation; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861113

Filename

861113