Title :
A Ka-band HBT MMIC power amplifier
Author :
Tanaka, S. ; Yamanouchi, S. ; Amamiya, Y. ; Niwa, T. ; Hosoya, K. ; Shimawaki, H. ; Honjo, K.
Author_Institution :
Optoelectron. & High-Frequency Device Res Labs., NEC Corp., Ibaraki, Japan
Abstract :
This paper reports on the fully matched, HBT MMIC power amplifier operating at the Ka-band with >1W CW output power. At 30 GHz, the power amplifier delivered maximum output power of 1.59 W with peak PAE of 35% and 6.5-dB linear gain. The achieved performance indicates that HBTs are strong candidate as cost-effective MMICs for Ka-band wireless applications.
Keywords :
MMIC power amplifiers; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; millimetre wave power amplifiers; power integrated circuits; 1 to 1.59 W; 30 GHz; 35 percent; 6.5 dB; EHF; HBT MMIC power amplifier; Ka-band amplifier; Ka-band wireless applications; cost-effective MMICs; fully matched power amplifier; Electronic ballasts; Fingers; Heterojunction bipolar transistors; High power amplifiers; Laboratories; MMICs; Millimeter wave technology; National electric code; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861119
