Title :
Extension of emission wavelength of GaInNAs QDs grown on GaAs [001]
Author :
Nishikawa, A. ; Hong, Y.G. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Sci. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Recently, we have shown that by optimizing the growth condition, the photoluminescence intensity and full width at half maximum (FWHM) of GaInNAs QDs can be improved to be comparable to those of GaInAs QDs. In this study, we investigate the nominal thickness and barrier material of GaInNAs QDs in order to extend the emission wavelength to longer regimes. The longest wavelengths we have achieved are 1.38 μm at 10 K and 1.48 μm at room temperature with the PL intensity at 10 K only 1/15 of that of GaInAs QD.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; 1.38 micron; 1.48 micron; 10 K; 293 to 300 K; FWHM; GaAs; GaAs [001]; GaInNAs; GaInNAs QD; PL intensity; barrier material; emission wavelength extension; full width at half maximum; growth condition; nominal thickness; photoluminescence intensity; room temperature; Atomic force microscopy; Computer science; Degradation; Gallium arsenide; Multilevel systems; Nitrogen; Quantum computing; Quantum dot lasers; Substrates; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205389
