DocumentCode
3531471
Title
50-Gbit/s AGC and modulator driver amplifier ICs based on InP/InGaAs HBT technology
Author
Watanabe, Koichi ; Hashimoto, Masashi ; Kudo, Hiromi ; Uchiyama, Hiroyulu ; Ohta, Hiroshi ; Ouchi, Kiyoshi ; Takeyari, Ryoji
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
2003
fDate
12-16 May 2003
Firstpage
370
Lastpage
373
Abstract
We demonstrated first 50-Gbit/s operation of AGC and modulator driver amplifier ICs based on InP/InGaAs heterojunction-bipolar-transistor (HBT) technology aimed for 40-Gbit/s optical transceivers equipped with over 20% forward error correction (FEC).
Keywords
amplifiers; automatic gain control; bipolar analogue integrated circuits; driver circuits; forward error correction; optical receivers; optical transmitters; transceivers; 40 Gbit/s; 50 Gbit/s; AGC; InP-InGaAs; InP/InGaAs HBT technology; InP/InGaAs heterojunction-bipolar-transistor technology; forward error correction; modulator driver amplifier IC; optical transceivers; Driver circuits; Forward error correction; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Operational amplifiers; Optical amplifiers; Optical modulation; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205392
Filename
1205392
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