Title :
Performance and design considerations for high speed SiGe HBTs of fT/fmax=375 GHz/210 GHz
Author :
Rieh, Jae-Sung ; Jagannathan, Basanth ; Chen, Huajie ; Schonenberg, Kathryn ; Jeng, Shwu-Jen ; Khater, Manvan ; Ahlgren, David ; Freeman, Greg ; Subbanna, Seshadri
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375 GHz and 210 GHz, respectively, are reported. The achieved fT of 375 GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4 V and 5.0 V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.
Keywords :
Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit layout; millimetre wave bipolar transistors; semiconductor materials; 1.4 V; 210 GHz; 375 GHz; 5.0 V; Gummel characteristics; SiGe; broadband communication applications; design considerations; device dimension; device structure; high speed SiGe HBTs; layout configuration; maximum frequency of oscillation; process steps; threshold frequency; Bipolar transistors; CMOS technology; Capacitance; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Photonic band gap; Silicidation; Silicon germanium;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205393
