Title :
Ultra-low intersubband absorption saturation intensity in InGaAs/AlAs/AlAsSb coupled double quantum wells with AlAs diffusion-stopping layers
Author :
Kasai, J. ; Mozume, T. ; Yoshida, H. ; Simoyama, T. ; Gopal, A.V. ; Ishikawa, H.
Author_Institution :
FESTA Labs., The Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
We have grown InGaAs/AlAs/AlAsSb coupled double quantum wells (C-DQWs) with AlAs diffusion-stopping layers by molecular beam epitaxy. Although the structural characterization of an obtained sample suggested a relatively poor structural quality, optical measurements revealed its high optical quality. The intersubband absorption saturation intensity in the C-DQW sample was extremely low, measuring 34 fJ/μm2 at the optical communication wavelength of 1.62 μm, while ultrafast response times of less than 1 ps were maintained. This result clearly points to the potential for C-DQWs with AlAs diffusion-stopping layers to be used in all-optical switches that can be applied in ultrafast optical communication systems.
Keywords :
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; infrared spectra; optical materials; semiconductor quantum wells; spectral line intensity; 1 ps; 1.62 micron; AlAs diffusion-stopping layers; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb coupled double quantum wells; all-optical switches; high optical quality; molecular beam epitaxy; ultra-low intersubband absorption saturation intensity; Absorption; Delay; Indium gallium arsenide; Molecular beam epitaxial growth; Optical coupling; Optical fiber communication; Optical saturation; Ultrafast optics; Ultraviolet sources; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205401
