Title :
Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs
Author :
Lefebvre, E. ; Zaknoune, M. ; Cordier, Y. ; Mollot, F.
Author_Institution :
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France
Abstract :
InP-like metamorphic buffers on GaAs for double heterojunction bipolar transistor (mDHBT) have been grown by molecular beam epitaxy. A two-stage procedure dedicated to DHBT is proposed to study the effect of the metamorphic growth. First, a DHBT-like InP/InGaAs/InP structure is used to evaluate bulk materials quality by photoluminescence, relaxation state by double axis high-resolution X-ray diffraction and surface/interface morphology by optical and atomic force microscopy. Secondly, the emitter-base junction has been studied on metamorphic diodes. First results obtained on InxAl1-xAs and lnx(AlyGa1-y)1-xAs gradual buffers, as well as on In0.52Al0.48As and InP uniform buffers, are presented and discussed.
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; heterojunction bipolar transistors; indium compounds; interface structure; photoluminescence; surface morphology; GaAs; In0.52Al0.48As; InAlAs; InAlGaAs; InGaAs; InP; InP-metamorphic heterojunction bipolar transistor; X-ray diffraction; atomic force microscopy; buffer layers; interface morphology; molecular beam epitaxy; optimisation; photoluminescence; surface morphology; Atom optics; Atomic force microscopy; Buffer layers; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205402
