Title :
Interface and material-quality study of InGaAsP/InP and InGaAsP1/InGaAsP2 superlattices
Author :
El-Zein, N. ; McDermott, B.T.
Author_Institution :
EpiWorks Inc., Champaign, IL, USA
Abstract :
We present work on the interface and material quality of InGaAsP/InP and InGaAsP1/InGaAsP2 superlattices and multi-quantum-well (MQW) structures. The samples are grown using Aixtron metal-organic chemical vapor deposition (MOCVD), on undoped as well as n-type [100] InP substrates. The parameters explored are: growth temperature, growth interrupts between layers, and group V total flow. The characterizations tools used to determine the quality of the multi-layered structures is: surface morphology, X-Ray curves, and photoluminescence spectra. Strained and unstrained InGaAsP layers are explored.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor quantum wells; semiconductor superlattices; surface morphology; Aixtron metal-organic chemical vapor deposition; InGaAsP-InGaAsP; InGaAsP-InP; InGaAsP/InGaAsP superlattices; InGaAsP/InP superlattices; InP; MOCVD; X-ray curves; characterizations tools; group V total flow; growth interrupts; growth temperature; interface study; material-quality study; multi-layered structures; multi-quantum-well structures; n-type [100] InP substrates; photoluminescence spectra; quality; strained InGaAsP layers; surface morphology; undoped [100] InP substrates; unstrained InGaAsP layers; Fiber lasers; Gallium arsenide; Indium phosphide; Optical materials; Quantum well devices; Quantum well lasers; Superlattices; Surface morphology; Temperature; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205404
